STS8DN6LF6AG parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

STS8DN6LF6AG

Description:

MOSFET 2 N-CHANNEL 60V 8A 8SO

Stock:

13324

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.26

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Parameters

Current at 25 ° C - continuous drain (Id)

8A(Ta)

Drain source voltage (Vdss)

60V

FET Type

2 N-channels(two)

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

27nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

1340pF @ 25V

On resistance (maximum) for different Ids and Vgs

24 mΩ @ 4A,10V

Power - maximum

3.2W

Vgs (th) (maximum) for different Ids

2.5V @ 250µA

packing

TR,CT

series

Automotive, AEC-Q101, STripFET™ F6

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载STS8DN6LF6AG.pdf

STS8DN6LF6AG（FET, MOSFET）BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory13324,Price reference "real-time change" China/Hongkong。 STS8DN6LF6AG package/specs, Download STS8DN6LF6AG、Datasheet。